| 摘要 |
PURPOSE:To form the good ohmic contact of a high-melting-point metal electrode and a compound semiconductor layer by effecting implantation of n type impurity ions through a germanium film on a compound semiconductor layer and subsequently forming a high-melting-point metal electrode on the germanium film followed by a heat treatment. CONSTITUTION:After a tungsten silicide film 5 and a tungsten film 6 formed on an n-channel region 4 are patterned into a gate electrode form, a silicon dioxide film is formed by CVD method and the subseqent patterning forms an ion implantation masking film 7 having an opening 7A. A germanium film 8 is formed by vapor deposition and n type impurity ions such as of silicon and selenium is implanted over the germanium by ion implantation film 8 to form a source region 9 and a drain region 10. Next a molybdenum film is patterned by lift-off and a source electrode 11 and a drain electrode 12 are formed, after which a heat treatment at 900 deg.C for 10sec is done to activate a channel layer 4, a source region 9, and a drain region 10 and to form an ohmic contact. |
