A solid-state image sensor.

摘要

@ A solid-state image sensor having a plurality of unit cells, each of which comprises a substrate (21); an electroconductive layer (22) formed on said substrate (21) and having a different polarity from the polarity of said substrate (21); a photoelectric conversion area (C) for the generation of a signal charge when illumination of the photoelectric conversion area is attained; and a CCD register area (A) for the transfer of the signal charge generated in said photoelectric conversion area (C), said photoelectric conversion area (C) and said CCD register (A) being formed with a space therebetween within said electroconductive layer (22) to substantially the same distance from said substrate (21), resulting in a complete depletion of each of the regions of said electroconductive layer (22), in which said photoelectric conversion area (C) and said CCD register area (A) are positioned, respectively, by the application of a reverse bias voltage between said electroconductive layer (22) and said substrate (21) to thereby attain the transfer of the excess charge generated in said photoelectric conversion area (A) not only from said photoelectric conversion area (A) into said substrate (21) but also from said CCD register area (C) into said substrate (21) through the corresponding depleted regions of said electroconductive area (A).