Single crystal growing method and apparatus.

摘要

The main point of the present invention is to minimize impurity contamination and to prevent a heat convection from affecting the solid-melt interface by floating a baffle plate (16) in the interior of a crucible (7) which contains a feed melt (12) in order to obtain a single crystal (15) of a small dislocation density, in pulling up a single crystal (15) of a compound semiconductor having a high melting point and exhibiting high dissociation pressure at the said melting point such as a compound semiconductor of Groups III-V, especially GaAs or Gap. Improvement is made on the shape of the baffle plate (16) and on baffle plate moving means (18), and this baffle plate (16) is suitably combined with suitably selected intra-furnace pressure or heating means or temperature measuring means.