| 摘要 |
PURPOSE:To form contact hole with tapered shape on an insulating film by means of simultaneous etching process by a method wherein an exposed part of a resist film and an insulating film is simultaneously etched utilizing reactive ion etching process (RIE) by means of heating a resist film for taper processing a contact hole therein. CONSTITUTION:A resist film 6 is formed on the second SiO2 film 4 by means of prebaking photoresist and then a hole as contact hole 7 is formed by exposure and development utilizing conventional photoetching process. Next the hole 7 is chamferred by means of postbaking the resist film 6 and then the resist film 6 is processed by RIE utilizing mixed gas of CF4 and O2 with mixing ratio of 96:4 to transfer the tapered shape of hole 7 thereof to the second SiO2 film 4 forming another contact hole 5 with the same tapered shape thereon. |
