| 摘要 |
PURPOSE:To prevent the deterioration of the characteristics of the photo diode, which is caused by a diffusion phenomenon between the amorphous silicon layer and the metal layer of aluminum and so forth, and to obtain the photo diode with the favorable forward and inverse characteristics by a method wherein the photo diode and the electrostatic capacity are connected in series to each other and the photo diode is constituted in such a way that no metal material layer is interposed in the amorphous silicon layer. CONSTITUTION:The photo diode is formed among a metal layer 13, an amorphous silicon layer 6 and a transparent electrode layer 4, and the electrostatic capacity is formed of a protective film 12, which is held between the metal layer 13 and an aluminum electrode layer 14. Moreover, by increasing the thickness of the transparent electrode layer 4, the trouble, which is caused by the resistance of the transparent electrode layer 4, can be reduced and by applying a lift-off method in the photoengraving process, the photo diode can be constituted in such a way that no aluminum layer is interposed in the amorphous silicon layer 6. By this method, the diffusion of aluminum into the amorphous silicon layer 6 can be completely stopped. |
