| 摘要 |
PURPOSE:To make it feasible to perform dry-etching process with high precision as well as to wire at low cost by a method wherein three layered structure of Au, Ti and Al are constituted for wiring process. CONSTITUTION:In case of forming a wiring electrode, an Au film 7, a Ti film 8 and then an Al film 9 are formed. At this time, Ti fills the role of a barrier to prevent AuAl from becoming an eutectic compound setting the problem of deterioration in Al as an ohmic electrode part making it feasible to utilize Al as a wiring layer. Moreover, Al with excellent ohmic characteristics as usual to be dry-etched at low cost may be utilized with remarkable practical effect. |
