| 摘要 |
PURPOSE:To obtain the photoelectric conversion element of high photoelectric conversion efficiency while does not cause a deline in a short-circuit current or a curve factor even under the high-speed film forming condition by varying the deposition velocity so as to become lower at least in the region of the initial stage of formation of a light-active layer and to become higher in the rest region at a time of fabricating the light-active layer only with disilane. CONSTITUTION:In a plasma CVD device, a P-layer is formed to be about 100Angstrom thick, with B2H6/Si2H6=0.1vol%, Si2H6/H2=50vol%, under 0.1Torr of pressure, 8.2KJ/g-Si2H6 of supplied energy, and temperature of 200 deg.C. nextly, the substrate is transferred into a light-active layer forming chamber, where with the temperature of 300 deg.C, the forming pressure of 0.08-0.3Torr and the supplied energy of 60KJ/g-Si2H6, a flow of Si2H6 and RF electric power is changed so as to vary the deposition velocity from 0.5-25Angstrom /S and the light-active layer of about 5,000Angstrom is formed at an average deposition velocity of 20Angstrom /S. Nextly, the substrate is transferred into an N-layer forming chamber where the N-layer is formed to be about 300Angstrom with PH3/Si2H6=1vol%, S2H6/H2=10vol%. The substrate is taken out through a substrate take-out chamber and Al electrodes are formed by vacuum deposition, and thus the photoelectric conversion element of high photoelectric conversion efficiency can be obtained. |
