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发明名称
SEMICONDUCTOR DEVICE
摘要
PURPOSE:Diffusion into deep regions such as emitter regions is made easy and heat treatment for a long time at a high temperature is omitted to minimize crystal defects by utilizing the fast diffusing speed of impurities in porous materials.
申请公布号
JPS51132974(A)
申请公布日期
1976.11.18
申请号
JP19750057029
申请日期
1975.05.14
申请人
NIPPON ELECTRIC CO
发明人
SHIYOUJI SATORU
分类号
H01L29/73;H01L21/331;H01L29/08
主分类号
H01L29/73
代理机构
代理人
主权项
地址
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