Treatment process for semiconductor wafer

摘要

A process for preparing a semiconductor wafer having one region including impurities at a concentration of more than 5x1016 cm-3 therein, in which an energy beam is radiated onto this one region of the semiconductor wafer in order to form small defects therein and out diffuse the impurities, respectively. Thereby, a region including no small defects is formed in a surface region of the semiconductor wafer and another region including many defects is formed in an internal region of the semiconductor wafer.