| 摘要 |
PURPOSE:To eliminate the possibility of adhesive force, contamination, etc., and to manufacture a poly Si device having low resistance and a low stepped section by forming a region consisting of a high melting-point metal or a high melting- point metallic silicide to the side wall of a gate poly Si electrode. CONSTITUTION:A gate poly Si electrode 7 is shaped through a reactive ion etching (RIE) method, and N<+> diffusion regions 3 as source-drain regions are formed. A high melting-point metallic film or a high melting-point metallic silicide film 8 is shaped onto the whole surface of a wafer, only the film 8 of a flat section is removed through etching by the RIE method, and a region 8a composed of a high melting-point metal or a high melting-point metallic silicide is formed. Accordingly, the resistance of the gate electrode can be lowered. |
