发明名称 SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To form a sufficiently thick protective film without generating cracks by dividing a bonding pad into the plural. CONSTITUTION:Al or an Al alloy is used as the principal ingredient. Conductor layers 1 consisting of the alloy, etc. form one electrode sections on four divided surfaces. A continuous contact area between a conductor metal constituting the electrode and an insulating film is quartered approximately by forming the electrode section in such structure. Accordingly, no crack is generated even when the insulating film consisting of SiO2 or PSG through a CVD method in thickness such as 2.0-2.5mum is grown.
申请公布号 JPS6149452(A) 申请公布日期 1986.03.11
申请号 JP19840171871 申请日期 1984.08.17
申请人 MATSUSHITA ELECTRONICS CORP 发明人 OKAMOTO TOMIO
分类号 H01L21/60;H01L23/485 主分类号 H01L21/60
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