| 摘要 |
Disclosed is a digital memory in which data is stored by establishing perturbations in a surface of a substrate and thereafter identifying the perturbations by establishing a tunnel electron current between the surface of the substrate and a movable probe. The perturbations can be physical, electrical, or magnetic, for example, such that the tunneling electron current is affected thereby. Storage area for a bit of data can be reduced to the order of 10-4 square microns, and the volume of a 100 megabyte mass storage can be reduced to the order of a cubic centimeter.
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