发明名称 Method of and apparatus for the drawing of bars of monocrystalline silicon
摘要 High-purity silicon bars can be produced by electrically melting a portion of a mass of silicon granules in a crystal so that the mass around the melt isolates the melt from the crucible wall and thereby prevents contamination of the melt from the crucible and softening of the crucible wall by the melting heat. The current flow is promoted by the heating of the silicon granules and/or electrodes and a seed can be lowered into the melt so that a bar can be withdrawn therefrom for cutting up into wafers for use in the production of semiconductors.
申请公布号 US4575401(A) 申请公布日期 1986.03.11
申请号 US19840618192 申请日期 1984.06.07
申请人 WEDTECH CORP 发明人 PINKHASOV, EDUARD
分类号 C30B15/16;C01B33/02;C30B15/10;C30B15/14;C30B29/06;H01L21/18;H01L21/208;(IPC1-7):C30B15/14 主分类号 C30B15/16
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