| 摘要 |
A method for producing thin films of chalcogenides of the rare earths characterized by introducing a rare earth metal vapor into an atmosphere not containing oxygen, but containing a gaseous chalcogen as well as hydrogen, at a total pressure about 1x10-4, giving rise to a reaction which forms a gaseous rare earth chalcogenide. The gaseous rare earth chalcogenide is then deposited as a thin film on a substrate heated to 200 DEG C. to about 400 DEG C.
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