LASER INDUCED FLOW GE-O BASED MATERIALS

摘要

LASER INDUCED FLOW Ge-O BASED MATERIALS Michelangelo Delfino William I. Lehrer In a semiconductor device, laser energy is used to selectively heat various SiO2 and/or GeO2 based materials to elevated temperatures while maintaining the active device region and electrical interconnects at relatively low temperatures, to for example, induce densification and/or flow of the SiO2 and/or GeO2 based material to round off sharp edges and stops, without damaging or affecting the active region and electrical interconnects.