| 摘要 |
PURPOSE:To perform an extrafine element separating region and to reduce the distortion of a semiconductor layer by forming a semiconductor layer in the recess of an irregular dielectric film formed on a substrate. CONSTITUTION:An Si3N4 pattern mask of an element separating region is formed on the back surface of a P type Si substrate formed with Si3N4 films on the front and back surfaces, and isolating grooves are etched on the substrate. The pattern mask is removed by electrolytically polishing, and the Si3N4 mask is then removed by an RIE method. Then, a CVDSiO2 film 7 is formed, flattened, and a melted silica glass 8 is bonded. Then, after the Si3N4 film on the surface is removed, the substrate 6 is etched with a mixture solution of HNO3+HF+ CH3COOH to expose the film 7, and to form a mirror surface by electrolytically polishing. Then, a gate oxide film 4, a polysilicon gate electrode 5 and an N type diffused layer 3 are formed by the know method. According to this configuration, when the layer 6 is formed on the recess of the film 7, the region 7 can be finely formed to completely remove a smear when applied to a solid state image sensor. |
