| 摘要 |
PURPOSE:To obtain the thin film of hydrogenated amorphous silicon-carbon having high photosensitivity and satisfactory insulation by carrying out magnetron sputtering in an atmosphere contg. CH4. CONSTITUTION:A target 2 is placed on the magnet 3 of a magnetron sputtering device in a vessel 8, and a substrate 4 is placed opposite to the target 2 and heated to about 300 deg.C with a heater 6 controlled with a temp. controller 5. The vessel 8 is evacuated to >=1X10<-5>Torr degree of vacuum through an exhaust pipe 7. Gaseous CH4 and gaseous Ar are then fed to the vessel 8 through gas feeding pipes 9, 10, and magnetron sputtering is carried out to form a thin film of hydrogenated amorphous silicon-carbon on the substrate 4. A single crystal silicon plate is used for the target 2. |
