| 摘要 |
PURPOSE:To rapidly manufacture an IC with desired characteristics, by a method wherein the characteristics of an FET, of which many units are manufactured on the same wafer, are measured beforehand, and units having good characteristics are selected and wirings are performed. CONSTITUTION:Many of unit groups which are composed of plural number of FETs 2 are arranged on a semi-insulating property GaAs substrate 1. FET checking pads which combine contacts which are formed by the first metallic films 3 are provided from the gates of each FET for measuring the characteristics of each FET2 which compose each groups. The characteristics of the FET are measured using these checking pads, and most adequate FET are selected. The selected FET are connected mutually with metallic films for wiring by forming insulating film between layers on the substrate 1, and desired IC is constituted. |
