| 摘要 |
PURPOSE:To eliminate relative, positional scattering between a base contact region and emitter region by a method wherein openings are simultaneously formed for the selective formation of the base contact region and emitter region. CONSTITUTION:An insulating film 7 formed on a semiconductor layer 2 of one conductivity type to be developed into a collector region is selectively removed and first openings 8, 9 are provided at locations where a base contact region and emitter region are to be formed. Next, an impurity-implanted layer 10 of other conductivity type is formed, whereafter an insulating film 11 is formed with a second opening 91 provided at a location corresponding to the first opening 9. Next, the impurity-implanted layer 10 on the bottom of the opening 91 is removed by etching, with the resultant vacancy to be replaced by another semiconductor layer 12 of the one conductivity type. The entirety of the insulating film 11 is then removed, the impurity-implanted layers 10, 12 are activated, and then a base contact region 3, emitter region 5, and active base region 4 are formed. |
