| 摘要 |
PURPOSE:To securely quicken the propagation delay time of each collector on the side of an injector by a method wherein the area of each collector is made larger in order according as the collectors become more distant from the injector, and the length of the side of each collector, which opposes to the injector, is made longer gradually according as the collectors become more distant from the injector. CONSTITUTION:The area of a collector 6-1 most close to an injector 5-1 among plural pieces of collectors, which are formed within the extent of the base layer 5-2 of the vertical type NPN transistor, is made smallest and the areas of the other collectors are made larger in order according as the other collectors become more distant from the injector 5-1. Moreover, the length of the side of each collector, which opposes to the injector 5-1, is made longer gradually according as the collectors become more distant from the injector 5-1. By this constitution, the propagation delay time of each collector is securely quickened on the side of the injector 5-1. |
