| 摘要 |
PURPOSE:To enable to reduce the operating temperature difference between the transistor pair by a method wherein the transistor pair, which need thermal matching, are provided on the semiconductor substrate, the first transistor between the transistor pair is equally divided into at least two and the first transistor divided into two are disposed at the symmetrical positions to the second transistor on the periphery of the second transistor. CONSTITUTION:The first transistor having the emitter regions 4-7-4-10 is equally divided into two in such a way as to be made into two transistors of a transistor having the emitter regions 4-7 and 4-8 and a transistor having the emitter regions 4-9 and 4-10, and the first transistors divided into two are disposed adjacent to the second transistor having the emitter region 4-6 on the periphery of the second transistor. According to this disposition, there exists no part with a comparatively larger temperature difference and the temperature difference between the parts of the emitter regions 4-6-4-10 is decreased. Moreover, the first transistor is equally divided into three, four or more, the first transistors divided into such the number are disposed on the periphery of the second transistor and the operating temperature difference between the transistor pair can be reduced. |
