| 摘要 |
PURPOSE:To remove articles having defective gate insulating films in advance of burn-in using a simple method in the case of manufacturing insulating gate type semiconductor devices by applying a fixed voltage via gate electrodes to an insulating film just under the gate electrodes and preparing a process for selecting non-destructive element chips. CONSTITUTION:In manufacturing MISFET IC devices, after weak portions in a gate insulating film are destructed by applying a DC voltage to the gate insulating film, a process for manufacturing fixed semiconductor component elements is prepared. This method allows defective chips to be removed in probe testing which is done with wafers cut down. For example, after LOCOS is formed on a P type silicon wafer, a gate insulating film of the thickness of about 500Angstrom is formed on the whole surface of the silicon wafer to form a gate electrode uniformly. Subsequently, the DC voltage of 10V is applied to the gate electrode and the silicon wafer for several hours in a vacuum or an atmosphere of an inactive gas with high purity so as not to contaminate the gate insulating film. |
