| 摘要 |
PURPOSE:To produce thin-film transistors of N-channel, P-channel polycrystalline silicon with low defect density on a large area on a glass substrate of low heat- resisting capability by a method wherein PH3 gas or B2H6 gas is exposed to plasma decomposition. CONSTITUTION:On a glass substrate 7, a polycrystalline silicon thin film 8 is formed, whereafter a gate insulating film 9 and gate electrode 10 are formed on the polycrystalline silicon thin film 8. A process follows wherein a pattern is formed as indicated by the gate insulating film 9, with the gate electrode 10 serving as a mask, for the exposure of the surface of the polycrystalline silicon film to be developed into source-drain regions. For the formation of a source region 11 and drain region 12, exposure to PH3 plasma atmosphere is effected for the formation of an N-channel thin-film transistor, and to B2H6 plasma atmosphere for the formation of a P-channel thin-film transistor. |
