| 摘要 |
<p>PURPOSE:To realize a semiconductor image memory device capable of retaining memory for a prolonged period of time by a method wherein every one of the picture element section of a solid-state image pickup element is provided with an NMOS-type involatile analog memory and the source is grounded with the intermediary a photoconductive element. CONSTITUTION:The picture element sections M11, M12 of an X-Y matrix-type image pickup element are provided with NMOS-type analog memories and the sources of the memories are grounded through photoconductive elements R11, R12, respectively. Amorphous silicon, with its conductivity factor variable across 3-4 digits in magnitude under different levels of optical energy, is used for the constitution of the photoconductive elements. With the memory device mechanism designed as such, when WRITE voltages, dependent upon the size of optical energy the photoconductive elements R11, R12 are exposed to, are applied across gates and sources, the information is kept for a prolonged period of time in the NMOS-type analog memories M11, M12.</p> |
