SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE:To reduce power consumption by a method wherein the collector layer of a lateral PNP transistor serving as an injector is formed to be thicker than the emitter layer. CONSTITUTION:The collector region 6-3, facing an injector 6-1, of a lateral PNP transistor is formed by diffusion deeper than the injector 6-1. This greatly increases the current amplification factor of the lateral PNP transistor. The device of this design consumes far less electric power than an IIL of the conventional structure does.