| 摘要 |
PURPOSE:To increase a current amplification factore largely by forming a first conduction type collector layer, a second conduction type base layer and a first conduction type emitter layer, which is in contact with an indium gallium arsenic phosphorus compound layer and consists of an aluminum indium arsenic compound. CONSTITUTION:A collector layer, a base layer and an emitter layer are grown on an InP substrate 1 in an epitaxial manner in succession. An acceptor impurity doped to an InGaAs layer 3 is diffused to an InGaAsP layer 4 at an epitaxial- growth temperature for the InGaAsP layer 4 and an InAlAs layer 5, and a p-n junction is shaped on a hetero-junction interface between the n type InAlAs layer 5 and the InGaAsP layer 4 changed into a p type. Emitter electrodes 6 and a collector electrode 7 are formed to the semiconductor base body, and mesa-etching is conducted. The hetero-junction by the InGaAsP layer 4 and the InGaAs layer 3 having a band gap smaller than the layer 4 is formed to the base layer, thus improving an electron transport factor, then largely increasing a current amplification factor. |
