| 摘要 |
PURPOSE:To form electrodes doing no damage to other surface of semiconductor by a method wherein, in order to form an ohmic electrode on a III-V group compound semiconductor, a protective film with electrode contact openings is firstly provided on the semiconductor surface and after filling the openings with Mo/Ge materials, the semiconductor and the filling materials are alloyed in the atmosphere subsject to Ar pressure. CONSTITUTION:An N<+> type GaAs layer 2 is grown on a semiinsulating GaAs substrate 1 and after covering overall surface with a protective film 3 made of SiO2 etc., multiple openings 3A are made corresponding to electrode forming regions. Firstly overall surface including the openings 3A is covered with an MoGe film 4 to be electrodes later while forming a photoresist film 5 reducing the surface irregularities. Later the film 4 and the film 5 thereon are removed leaving only the parts buried in the openings 3A by means of either ion-milling process utilizing Ar ion or etching process utilizing mixed gas of CF4+O2. Finally residual part of film 4 and exposed part of layer 2 are alloyed in the atmosphere subject to Ar pressure to form excellent ohmic electrodes. |
