| 摘要 |
PURPOSE:To obtain a semiconductor device, traps in a semiconductor layer thereof are buried with hydrogen and which has excellent characteristics, by introducing hydrogen to the semiconductor layer, forming an silicon nitride film and thermally treating the whole. CONSTITUTION:An SiO2 film and a polycrystalline silicon film 3 are applied and shaped onto a quartz substrate 1. The polycrystalline silicon film 3 is hydrogenated through hydrogen plasma-annealing. An silicon nitride film 4 is applied and formed at a temperature lower than a temperature used in hydrogen plasma-annealing. The damage of the polycrystalline silicon film 3 is recovered through annealing at a temperature higher than the temperature employed in the hydrogen plasma-annealing. The plasma silicon nitride film 4 shaped onto the polycrystalline silicon film 3 has a large blocking effect to hydrogen because of compact structure at that time, thus preventing a re-discharge outside a film on annealing of hydrogen taken into the polycrystalline silicon film 3 on hydrogen plasma-annealing. |
