| 摘要 |
PURPOSE:To prevent the generation of trouble, such as electromigration, resistance, creeping breaking and the partial fracture of an electrode wiring by forming the thickness of each layer in a monomolecular (or an atomic) layer or more and evaporating substances of two kinds or more in total in two layers or more. CONSTITUTION:A thernmal oxide SiO2 film 1 in thickness such as 0.5mum thickness is formed onto an Si substrate 2, and a Ta layer 3 in 5nm and an Al layer 4 in 100nm are evaporated onto the SiO2 film 1. The Al/Ta films are superposed and evaporated in nine layers, and a wiring in approximately 1mum width is processed. Crystal grains in an electrode wiring can be made small in such a wiring, thus displaying an effect of which defects, such as electromigration resistance, creeping breaking, the fracture of the wiring, etc. are reduced. |
