| 摘要 |
A Schottky-gate field effect transistor comprises a semi-insulative semiconductor substrate, an active layer formed on one surface of the substrate, a source electrode and a drain electrode on the active layer in ohmic contact thereto, respectively, a first Schottky gate electrode on the active layer between the source and drain electrodes, and a second Schottky gate electrode on the active layer between the drain electrode and the first gate electrode. A portion of the active layer underneath the second gate electrode has a sheet resistance smaller than that of the active layer portion underneath the first gate electrode. The source electrode and the second electrode is electrically interconnected by connection means formed on the substrate. |
