发明名称 |
Semiconductor film of a chalcogenide of a transition metal, method for its preparation and application of this semiconductor film in solar cells. |
摘要 |
Semiconductor films composed of a dichalcogenide of a transition metal having, in particular, the composition MX2 (M = W, Mo; X = S, Se, Te) prepared in a particularly adapted method make possible their use in solar cells. Large-area films made of two-dimensional crystals 4 with good photoelectric behaviour are provided. The semiconductor film is produced at the boundary layer 5 of a melt 2 in a crystallisation vessel 1 and the gas phase 3 of the molten material above it. The two-dimensional crystals 4 having the composition MX2 and with large surfaces 8 and small side steps 9 which grow to form the semiconductor film are suitable as photovoltaic and photoelectric large-area semiconducting films for solar cells. <IMAGE> |
申请公布号 |
EP0173641(A2) |
申请公布日期 |
1986.03.05 |
申请号 |
EP19850730101 |
申请日期 |
1985.07.25 |
申请人 |
HAHN-MEITNER-INSTITUT BERLIN GESELLSCHAFT MIT BESCHRAENKTER HAFTUNG |
发明人 |
TRIBUTSCH, HELMUT, PROF. DR. RER. NAT.;LEWERENZ, HANS-JOACHIM, DR. RER. NAT.;SPIESSER, MICHEL, DR. |
分类号 |
C30B29/46;C30B9/00;C30B11/00;H01L21/368 |
主分类号 |
C30B29/46 |
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