| 摘要 |
A static RAM exhibiting a high reliability and suited to a higher density of integration is disclosed. In each memory cell of this static RAM, the cross coupling of a flip-flop circuit is made by gate electrodes of MISFETs constituting this flip-flop circuit. In addition, a source line is formed by the same step as that of a word line. A resistance value of a polycrystalline silicon layer which is a load resistor is changed in accordance with information to be stored. Furthermore, semiconductor regions for preventing soft errors attributed to alpha particles etc. are formed under the MISFETs constituting the flip-flop circuit, so that the channels are not adversely affected. |
