Low field electrophotographic process.

摘要

An electrophotographic process in which a photoconductive insulating element, comprising a layer of intrinsic hydrogenated amorphous silicon in electrical contact with a layer of doped hydrogenated amorphous silicon, is electrostatically charged to a low level of surface voltage, such as, for example, a level of ten volts, provides an advantageous combination of very high electrophotographic sensitivity with minimal electrical noise.