| 摘要 |
PURPOSE:To obtain electrode wirings having low resistance and difficult to dissolve in medicines, by providing a nitride film of high fusion point metal on the surface of conductive film surface by heat treating conductive coating of high fusion metal or its silicide. CONSTITUTION:Ti2Si3 film 1 is treated in N2 by the spattering method for about 120sec at the 800-1,200 deg.C, and TiN2 film 2 of about 300Angstrom is made on the film 1. TiN2 is excellent for chemical-resistant property, and, for instance, there is no change even if it is treated in HF solution of 10:1 in 5min. The sheet resistance of this multiple is about 1.2OMEGA/square, and it is nearly the same with the sheet resistance of Ti2Si3 film. The same effect can be obtained by using Ta4Si5 or Ti, Ta besides Ti2Si3. |
