发明名称 Signal transfer system using a charge transfer device
摘要 A charge transfer device has one or more charge injection areas each having an input diffusion layer and two or more input gate electrodes. An input signal is applied to the input diffusion layer, a clock voltage is applied to one of the input gates and an input reference voltage is applied to the other input gate to inject a signal charge proportional to a difference between the input reference voltage and the input signal, and the signal charge is sequentially transferred. A magnitude of the input reference voltage is changed in accordance with a magnitude of a maximum value of the input signal so that transfer of charges which do not contribute to signal component is suppressed and a transfer efficiency is improved.
申请公布号 US4574384(A) 申请公布日期 1986.03.04
申请号 US19830525696 申请日期 1983.08.23
申请人 HITACHI, LTD. 发明人 MURATA, TOSHINORI;KAZUMI, MASAFUMI;ITO, YUJI
分类号 G11C19/28;(IPC1-7):H03K23/46 主分类号 G11C19/28
代理机构 代理人
主权项
地址