| 摘要 |
PURPOSE:To keep the output/current value characteristics linear to higher current values by a method wherein the light emitting region of an active layer is doped with a material serving as the non light emitting center, so that recombination generated via non light emitting center may become superior to Auger recombination. CONSTITUTION:A light emitting diode is formed by stacking an N-InP layer 12, an InGaAsP active layer 14, a P-InP layer 16, and a P-InGaAsP layer 18 on an N-InP substrate 10 as required, and the active layer 14 is doped with Fe or Cu to 10<16>/cm<3> or more. At this time, the process or recombination generated via non light emitting center which have been doped becomes superior to that of Auger recombination. The recombination generating via non light emitting center is proportional to the amount of current instead of contribution to photo-output generation and the Auger recombination decreases by a factor of its generation. Thereby, the non-linear characteristic is improved with respect to the drive current based on Auger recombination, and the photo output is not saturated to higher current values. |
