| 摘要 |
<p>PURPOSE:To increase the trigger sensitivity at the time of impressing reverse voltage by a method wherein the n1 layer in a photo carrier generating region is surrounded with a p1 layer convering over the front and back of a substrate and with an n2 layer except part of the back side, thus terminating the other end of a generating p-n junction to the substrate surface, and a p2 layer and an n1 layer are buried from the front. CONSTITUTION:The n1 type substrate 20 is isolated with a p1' layer 23 and an n2' layer 26, thus forming a p1 layer 30 and a p2 layer 31 on both surfaces. Successively, an n2 layer and an n3 layer 35 are selectively provided in the p1 layer 30 and a p2 layer 31, respectively; then, the n2 layer 34 is covered except the electride of the p1 layer 30. An Al electrode 38 connecting the p2 layer 31 with the n3 layer 35 is attached to the front by opening a window in the SiO2 film 41, and an Ni electrode 39 is attached to the back by etching away all the SiO2. When this device is operated by using the electrode 39 as the position, the photocurrent generating in the n1 layer 20 is cut off by the p-n junction terminating to the main surface and flows to the electrode 39 always through a resistor R136. Accordingly, photo trigger can be surely performed in a relation of R1XIP>=VP, and high gate sensitivity can be obtained. Then, characteristics stabilize because the terminal of a junction 27 is protected with the insulation film 41.</p> |
