发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To avoid the direct application of pressure and heat to the active region from a whisker lead by a method wherein projection electrodes are formed at positions other than that of the active region and thus brought into contact with the whisker lead. CONSTITUTION:The whisker lead 2 is in contact with projection electrodes 6a- 6d formed at parts located on an oxide film 8, of a double-layer metal 7 made of a Schottky barrier forming metal and a lead-out electrode metal. This structure does not allow the direct application of pressure from the lead 2 to the active region 5 because of the formation of the electrodes 6a-6d at positions other than that of the active region and because of their contact with the lead 2. Besides, the presence of a space between the region 5 and the lead 2 causes little thermal conduction to the region during sealing.</p>
申请公布号 JPS6144448(A) 申请公布日期 1986.03.04
申请号 JP19850043891 申请日期 1985.03.06
申请人 NEC CORP 发明人 SHIKANAKA TOSHIYUKI
分类号 H01L21/60;(IPC1-7):H01L21/92 主分类号 H01L21/60
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