发明名称 |
METHOD OF GROWING OXIDE LAYER ON INDIUM GALLIUM ARSENIDE |
摘要 |
<p>METHOD OF GROWING OXIDE LAYER ON INDIUM GALLIUM ARSENIDE A method of growing a water insoluble native plasma oxide on an In0.53Ga0.47As layer of the type that is useful in the fabrication of MOS type devices is disclosed. Oxygen is bubbled through a water chamber in order to introduce water vapor into the growth chamber during the growing process. The InGaAs layer is first sputter etched in the oxygen plasma while a negative potential is applied to the semiconductor structure. The pressure is then increased and the oxides are grown while a positive potential is applied to the semiconductor structure.</p> |
申请公布号 |
CA1201365(A) |
申请公布日期 |
1986.03.04 |
申请号 |
CA19820413300 |
申请日期 |
1982.10.13 |
申请人 |
WESTERN ELECTRIC COMPANY, INC |
发明人 |
NAHORY, ROBERT E.;TELL, BENJAMIN |
分类号 |
C23C8/36;H01L21/316;(IPC1-7):C30B25/02 |
主分类号 |
C23C8/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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