| 摘要 |
PURPOSE:To make Au diffuse to the neighborhood of the interface between a single crystal and an insulation film with good reproducibility by a method wherein an Au electrode is provided above the N type ZnSe single crystal via insulation layer, and electric fields are impressed by using the Au electrode as the positive. CONSTITUTION:An Au electrode film 3 is attached on one surface of the N type ZnSe single crystal 1, and an In ohmic electrode 4 is attached on the other surface of the single crystal. When an electric field of 10<7>-10<9>V/m is impressed for approx. 10min in the case of an Si2 film thickness of 50-150Angstrom , Au atoms diffuse to the neighborhood of the interface between the SiO2 film 2 and the single crystal 1. This method is excellent in reproducibility because of only Au diffusion with electric fields and yields the red light emitting element having a peak in the vicinity of 715nm. |
