| 摘要 |
PURPOSE:To assure the high reliability by a method wherein an insulating film normally insulated is connected and transferred to a redundant circuit making use of cnductive state due to dielectric breakdown in case of an incidental defect in a memory element. CONSTITUTION:When a power supply terminal 3 is supplied with power, a thermo-oxide film 8 is insulated, a switch part 9 is turned off and a redundant circuit is closed. Next in order to actuate the redundant circuit for replacing with any incidentally defective memory element, Al electrodes 21, 22 may be impressed with e.g. a voltage exceeding dielectric breakdown withstand voltage of another thermo-oxide film 18 100Angstrom thick from outside circuit. Through these procedures, the electrode 21 and the polycrystalline Si layer 8 may be made conductive, the switch part 9 turning on, the potential at point B becoming ''H'' state making it feasible to transfer regular circuit to redundant circuit. |
