| 摘要 |
PURPOSE:To contrive to prevent the input resistance layer of a semiconductor device from being fused-cut by heat by a method wherein the heat conducting layers are provided to the input resistance layer and the heat capacity of the input resistance layer is increased. CONSTITUTION:The areas of contact holes 15 and 16 are comparatively smaller and the electrical contact of an input resistance layer 12 with Al layers 19 and 20 is limited to parts only of the upper surface of the input resistance layer 12. Accordingly, the effect to effect the resistivity of the resistance layer 12 is small and the Al layers 19 and 20 are formed on the upper part of the resistance layer 12 with a comparatively larger spreading through insulating layers 13. Therefore, the Al layers 19 and 20, which are coupled thermally with the resistance layer 12, contribute to increasing the heat capacity of the resistance layer 12. Accordingly, the heat of the resistance layer 12, which is generated by current to flow between the contact hole 14 and the contact hole 17, is conducted to the Al layers 19 and 20 which are upper layers. As a result, the polycrystalline silicon being contained in the resistance layer 12 is prevented from being fused-cut by heat. |
