| 摘要 |
PURPOSE:To obtain the high-current-density contact by forming a protective layer after forming the first superconductor layer without exposing this superconductor layer to an oxygen atmosphere and then forming the second superconductor layer after removing said protective layer in the region for formation of superconductive contact without exposing the first superconductive layer to the oxygen atmosphere. CONSTITUTION:A superconductor layer 12 is formed on a substrate 11 and instantly a protective layer 13 is formed without exposing the layer 12 to the atmosphere including oxygen. Nextly the protective layer 13 and the conductor layer 12 are processed into the desired pattern. Next the insulator layer 14 comprising an opening in a contact region is formed and further the resist stencil mask 15 for formation of a superconductor layer 16 is formed. Then the protective layer 13 in the contact region is removed and the superconductor layer 16 is formed without exposing a surface of the conductor layer 12 in the contact region to the atmosphere including oxygen, followed by liftoff resulting in the formation of a superconductive contact. Thus the superconductive contact of high current density can be obtained with high yield. |
