| 摘要 |
PURPOSE:To contrive to stabilize the operation of the circuit of a semiconductor device by a method wherein a metal layer is made to interpose in the insulating films and the metal film is earthed to shield. CONSTITUTION:SiO2 is deposited on the whole surface of the substrate by a vapor-phase chemical deposit CVD method and a thick SiO2 film 6 is formed. An Al film 7 to be used for shielding is formed on this film 6 by performing an evaporation of Al and so forth. Then, SiO2 is deposited on the whole surface by a CVD method in such a way as to bury the Al film 7 in the SiO2 and an a-Si film 10 is formed on an SiO2 film 9 deposited by decomposing SiH4 according to a glow discharge. Then, Mo electrodes are formed on both end parts of the film 10, SiO2 is deposited, a gate insulating film 12 is provided on the film 10, an etching is performed on parts of the film 9 to open through holes 13 and 14, and the Al electrodes 15a, 15b and 15c of the element on the upper stage, which are connected to the Al electrodes 5a and 5b of the element on the lower stage, are provided. Moreover, the electrode 15c is connected to the film 7 for shielding and the film 7 is earthed as the terminal for shielding. |
