| 摘要 |
PURPOSE:To form a polycrystalline silicon film contg. many grains oriented in the <100> direction when a polycrystalline silicon film is formed by chemical vapor deposition under reduced pressure, by using SiH4 as a gaseous starting material and H2 as a diluting gas and carrying out deposition at a specified temp. CONSTITUTION:When a polycrystalline silicon film is formed by chemical vapor deposition under reduced pressure, a polycrystalline silicon film is deposited on a flat quartz glass substrate or the like at 670-730 deg.C using SiH4 as a gaseous starting material and H2 as a diluting gas. Thus, a polycrystalline silicon film contg. >=99% grains oriented in the <100> direction is obtd. |
