发明名称 |
A METHOD OF MAKING AN IMPROVED PHOTORESPONSIVE AMORPHOUS GERMANIUM-BASED ALLOY |
摘要 |
<p>A semiconductor material comprises amorphous Ge containing F (a- Ge: F). The material may also contain H, and may contain a bandgap adjusting element e.g. C or N. The material may be doped and may be utilised in Schottky, MIS, PIN and PN solar cells or in electrophotographic devices.</p> |
申请公布号 |
IN157308(B) |
申请公布日期 |
1986.03.01 |
申请号 |
IN1002CA1981 |
申请日期 |
1981.09.07 |
申请人 |
ENERGY CONVERSION DEVICES, INC. |
发明人 |
OVSHINSKY STANFORD ROBERT;ADLER DAVID |
分类号 |
H01L31/18;C23C14/00;C23C14/06;C23C14/32;C23C16/22;C23C16/44;H01L25/04;H01L29/16;H01L31/0376;H01L31/07;H01L31/20;(IPC1-7):H01L31/02 |
主分类号 |
H01L31/18 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|