发明名称 |
LEAD FRAME FOR SEMICONDUCTOR |
摘要 |
PURPOSE:To obtain a lead frame with eminent solderability and resin sealing by forming a surface layer through an Ni-Sn alloy plating or a Co-Sn alloy plating all over a metal substrate. CONSTITUTION:After a substrate 1 of tinned copper is punched into a desired pattern, a lead frame having respectively a semiconductor pellet fixed portion 6, an internal lead terminal 8 and an external lead 10 is made. After this lead frame is given the pretreatment such as degreasing and acid bathing, an Ni-Sn alloy plating 7 is set all over the substrate 1 from pyrophosphoric acid bathing with the electrolytic plating method and then a desired semiconductor lead frame is made by this. In case of making an IC package with this lead frame, an Si pellet 4 is placed on the semiconductor pellet fixed portion 6 through an Ag pace wax material 3 and is distributed to the internal lead terminal 8 with an Al fine line 9 and then all is sealed by a resin 11. |
申请公布号 |
JPS6142940(A) |
申请公布日期 |
1986.03.01 |
申请号 |
JP19840165489 |
申请日期 |
1984.08.07 |
申请人 |
HITACHI CABLE LTD;HITACHI LTD |
发明人 |
YOSHIOKA OSAMU;YAMAGISHI RYOZO;NAGAYAMA SADAO;WAKASHIMA YOSHIAKI |
分类号 |
H01L23/50;H01L21/58;H01L21/60;H01L23/28;H01L23/495 |
主分类号 |
H01L23/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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