| 摘要 |
PURPOSE:To prevent the punch-through or short channel effect from occurring by digging a groove for forming a gate, forming a gate insulated film on the exposed surface of a semiconductor substrate, then burying a conductive film in the groove, and implanting the impurities of source and drain region formation to the entire surface to activate it. CONSTITUTION:A gate forming groove 13 is formed by reactive ion etching on the element region of the first conductive type semiconductor substrate 11, a threshold controlling impurity is implanted to the bottom of the groove 13 to form a channel ion implanted layer 14. Then, a gate insulated film 15 is formed on the exposed surface of the substrate, a conductive film such as a polycrystalline silicon film 17 is, for example, accumulated on the overall surface of the substrate, etched to form a gate electrode 19 by allowing only the film 17 to remain in the groove 13. Then, the second conductive type impurity ions are implanted at 20 on the overall surface, activated to form source and drain regions 21, 22 extending to the bottom of the groove 13 in the impurity profile. |
