| 摘要 |
PURPOSE:To provide CMIS device by utilizing the fact that SiO2 groups rapidly on surface as density of impurity layer is higher for foming ion applying mask and applying ion through gate insulation film disposed on a side to form sources and drains. CONSTITUTION:P-layer 3 is disposed on n-type Si substrate 1 and selectively removed to form gate insulative film and further form Si gate electrode 5. Next, unnecessitated part of gate insulative layer 5 of n-channel FET and n-type source 9 and drain 10 are formed and the electrode 5 and Si wiring layer 11 are electrically conducibilized. Then, it is oxidized under low temperature steam to form SiO2 3 on the layers 9, 10 the electrode 5 and wiring layer 11 and then by impurity density SiO2 is formed on only these parts thicknessly and is not grown on other part. Thus, by applying B ion, p<+>-layers 7, 8 are formed without effecting to other part. By this method, thickness of SiO2 film to be removed by etching is reduced and stairs of the side of the wiring layer 11 is further reduced and thus CMIS device being continuous on upper layers. |
