| 摘要 |
PURPOSE:To increase the picture elements and the density of charge coupled semiconductor elements by coupling at least one or both part regions of the storage unit of the first horizontal shift register and the barrier and the storage unit of the second horizontal shift register via a charge transfer channel formed under a transfer gate electrode. CONSTITUTION:Some 38, 43, 40, 45 of transfer electrodes are connected with signal wires of the first phase phi1, and some 37, 42, 39, 44 are connected with the signal wires of the second phase phi2. A pair of electrodes 68, 69 adjacent to one transfer electrode 48 of a vertical shift register and the barriers 52-55 of a horizontal shift register 31 form the final electrode of the vertical shift register, 68 operates as a barrier electrode, and 69 operates as a storage electrode. Charge transfer channels 82, 83 formed under a transfer gate electrode 49 are coupled at least part regions of both or one of the storage units 61, 63 of the first phase phi1 of the first shift register 31 and the barriers 56, 58 and the storage units 64, 66 of the second phase phi2 of the second shift register 32. |
